Dry Etch
From CMM Wiki
Process Control Data
See the linked Process Control Data page for process control data (etch rate, selectivity, etc. over time) for a selection of commonly used dry etches.
Dry Etching Tools/Materials Table
Process Maturity Ranking
R6- most mature process with regular calibrations recorded on SPC charts.- ...
R1- least mature — process has been run at least once.A- process Allowed and materials available but never done.
The Key/Legend for this table's A...R6 values is at the bottom of the page.
| Dry Etching Recipes | |||||
| Material | RIE Etching | ICP Etching | Other Dry Etchers | UV Etch | |
|---|---|---|---|---|---|
| Oxford RIE | Oxford ICP | XeF2 Etch | Vapour HF Etch | UV | |
| Al | R2 | R1 | |||
| Au | R3 | ||||
| Cr | R2 | R1 | |||
| Cu | R1 | ||||
| Ge | R1 | R2 | |||
| Ni | R3 | ||||
| Pt | R3 | ||||
| Si | R6 | R3 | |||
| Ti | R1 | ||||
| W | R1 | ||||
| Al2O3 | R3 | ||||
| AlGaAs | R3 | R3 | |||
| AlGaN | R2 | ||||
| GaAs | R3 | R6 | |||
| GaN | R3 | R6 | |||
| InP | R3 | R6 | R3 | ||
| ITO | R3 | ||||
| Photoresist & Organics | R3 | R3 | |||
| SiC | R1 | ||||
| SiN | R3 | ||||
| SiO2 | R6 | R3 | |||
| SiOxNy | R1 | ||||
| TiO2 | R1 | ||||
| ZnO | R1 | ||||
| ZrO2 | R1 | ||||
| Material | Oxford RIE | Oxford ICP | XeF2 Etch | Vapour HF Etch | UV |
Process Ranking Table
Processes in the table above are ranked by their Process Maturity Level as follows:
| Process Level | Description |
|---|---|
A |
Process Allowed and materials available but never done |
R1 |
Process has been run at least once |
R2 |
Process has been run and procedure is documented |
R3 |
Process has been run, procedure is documented, and data is available |
R4 |
Documented procedure with regular (≥4x per year) data — no in-situ control available |
R5 |
Documented procedure with regular (≥4x per year) data — and in-situ control available |
R6 |
Documented procedure with control charts/limits available — fully controlled process |