Process Control Data

From CMM Wiki
Jump to navigationJump to search

Etching (Process Control Data)

Process Control data for varius dry etching recipes and tools in the lab.


ICP RIE - Process Control

Si Etching

We have found that Si etching is fairly sensitive to chamber condition.

<html>

<a href="https://docs.google.com/spreadsheets/d/1Gwpl0NEzoSiHtOgeUIAUJxsTbUqey-GvSEwSgSBCPIo/edit?gid=1129004670#gid=1129004670" target="_blank"> <img src="http://localhost/wiki/images/c/cd/ICP_Si_etch.png" width="400" style="border:1px solid #ccc; padding:5px;"> </a>
Click to view The plot

</html>

SiO2 Etching

Data obtained in 2026-07-07 by Laxmiprasad and Fernando

<html> <img src="https://uq-my.sharepoint.com/:i:/r/personal/uqfgotar_uq_edu_au/Documents/Documents/NAPF/microQ/2026-08/Plots/SiO2_EtchRate_2026-07-07.png?d=w4afb29bfee2641bc88f8120d5a7f48e0&csf=1&web=1&e=RMFjLy" width="600" style="border:1px solid #ccc;">
SiO₂ Etch Rate vs ICP RF Power - Resist used: AZ1512 - SiO2: thermal grown </html>


VS NEW OneDrive Method

<html>

<img src="https://uq-my.sharepoint.com/personal/uqfgotar_uq_edu_au/_layouts/15/download.aspx?UniqueId=4afb29bf-ee26-41bc-88f8-120d5a7f48e0" width="600" height="460" frameborder="0" scrolling="no" allowfullscreen title="SiO2_EtchRate_2026-07-07" width="600" style="border:1px solid #ccc; padding:5px;">
SiO₂ Etch Rate vs ICP RF Power - Resist used: AZ1512 - SiO2: thermal grown

</html>


VS Github

<html> <img src="https://raw.githubusercontent.com/UQNANO/uQ-Technology-Forum/wiki/facilities/ANFF/ICP-RIE/Etch_data/Plots/SiO2_EtchRate_2026-07-07.png" width="600"> </html>